●ABSOLUTE MAXIMUM RATING (Ta=25℃)
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
-0.3~+6.5
V
Power Dissipation
Pd
300(SSOP-B8) *1
330(TSSOP-B8) *2
mW
Storage Temperature
Tstg
-65~+125
℃
Operating Temperature
Topr
-40~+85
℃
Terminal Voltage
-
-0.3~VCC+0.3
V
※ Degradation is done at 3.0mW/℃(*1), 3.3mW/℃(*2) for operation above 25℃
●RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
1.7~5.5
V
Input Voltage
VIN
0~VCC
V
●MEMORY CELL CHARACTERISTICS(Ta=25℃, VCC=1.7~5.5V)
Parameter
Write / Erase Cycle *1
Data Retention
*1
Specification
Min.
Typ.
1,000,000
-
40
-
Max.
-
-
Unit
Cycles
Years
*1:Not 100% TESTED
●DC OPERATING CHARACTERISTICS (Unless otherwise specified Ta=-40~85℃, VCC=1.7~5.5V)
Parameter
Specification
Symbol
Unit
Min. Typ. Max.
Test Condition
"H" Input Voltage 1
VIH1 0.7 VCC -
-
V 2.5V≦VCC≦5.5V
"L" Input Voltage 1
VIL1 -
- 0.3 VCC V 2.5V≦VCC≦5.5V
"H" Input Voltage 2
VIH2 0.8 VCC -
-
V 1.7V≦VCC<2.5V
"L" Input Voltage 2
VIL2 -
- 0.2 VCC V 1.7V≦VCC<2.5V
"L" Output Voltage 1
VOL1 -
-
0.4
V IOL=3.0mA,2.5V≦VCC≦5.5V(SDA)
"L" Output Voltage 2
VOL2 -
-
0.2
V IOL=0.7mA,1.7V≦VCC<2.5V(SDA)
Input Leakage Current 1 ILI1
-1
-
1
μA VIN=0V~VCC(A0,A1,A2,SCL)
Input Leakage Current 2 ILI2
-1
-
15
μA VIN=0V~VCC(WP)
Output Leakage Current ILO
-1
-
1
μA VOUT=0V~VCC (SDA)
Operating Current
VCC =5.5V,fSCL=400kHz,tWR=5ms
ICC1 -
-
2.0
mA
Byte Write
Page Write
Write Protect
VCC =5.5V,fSCL=400kHz
ICC2 -
-
0.5
mA
Random Read
Current Read
Sequential Read
Standby Current
ISB
-
-
2.0
μA
VCC =5.5V,SDA,SCL= VCC
A0,A1,A2=GND,WP=GND
○ This product is not designed for protection against radioactive rays.
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