BUW11F Ver la hoja de datos (PDF) - Inchange Semiconductor
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BUW11F Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUW11F BUW11AF
DESCRIPTION
·With TO-3PFa package
·High voltage ;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
l
Absolute maximum ratings(Ta=25℃)
体 SYMBOL
PARAMETER
固I电NC半H导ANGE SEMICONDUTOR VCBO
Collector-base voltage
BUW11F
BUW11AF
VCEO
BUW11F
Collector-emitter voltage
BUW11AF
VEBO
Emitter-base voltage
IC
Collector current
CONDITIONS
Open emitter
Open base
Open collector
VALUE
850
1000
400
450
9
5
UNIT
V
V
V
A
ICM
Collector current-peak
10
A
IB
Base current
2
A
IBM
Base current-peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
TC=25℃
4
A
41
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
MAX
35
UNIT
K/W
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