18N20GJ-HF Ver la hoja de datos (PDF) - Advanced Power Electronics Corp
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18N20GJ-HF Datasheet PDF : 4 Pages
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Advanced Power
Electronics Corp.
AP18N20GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
▼ RoHS Compliant & Halogen-Free
D
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18N20GJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
200V
170mΩ
18A
G DS
TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
200
± 20
18
9.5
60
89
0.7
2
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.4
62.5
110
Data & specifications subject to change without notice
Units
V
V
A
A
A
W
W/℃
W
℃
℃
Unit
℃/W
℃/W
℃/W
1
201006224
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