MJE3055 Ver la hoja de datos (PDF) - TY Semiconductor

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MJE3055

TO-220-3LPlastic-Encapsulate NPN Transistors

TY Semiconductor 

Product specification

TO-220-3L Plastic-Encapsulate Transistors

MJE3055 TRANSISTOR (NPN)

FEATURES

General Purpose and Switching Applications

TO-220-3L

1. BASE

2. COLLECTOTR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Value

Unit

70

V

60

V

5

V

10

A

2

W

150

℃

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Symbol

Test conditions

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1) *

hFE(2) *

VCE(sat) *

VCE(sat) *

VBE*

fT

IC=1mA, IE=0

IC=200mA, IB=0

IE=1mA, IC=0

VCB=70V, IE=0

VEB=5V, IC=0

VCE=4V, IC=4A

VCE=4V, IC=10A

IC=4A, IB=0.4A

IC=10A, IB=3.3A

VCE=4V, IC=4A

VCE=10V, IC=0.5A

Min Typ

70

60

5

20

5

2

Max

1

5

100

Unit

V

V

V

mA

mA

1.1

V

8

V

1.8

V

MHz

Note:*Pulse test: tp≤300μS, δ≤0.02.

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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