STB8NC50-1 Ver la hoja de datos (PDF) - STMicroelectronics
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STB8NC50-1 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDD = 250 V, ID = 4 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 400V, ID = 8 A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400V, ID = 8 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =8 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STP8NC50/FP/STB8NC50-1
Min. Typ. Max. Unit
19
ns
14
ns
36
46
nC
5
nC
18.2
nC
Min.
Typ.
13
15
26
Max.
Unit
ns
ns
ns
Min. Typ. Max. Unit
8
A
32
A
1.6
V
470
ns
3.2
µC
13.7
A
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
3/10
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