BUT12AF Ver la hoja de datos (PDF) - Inchange Semiconductor

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BUT12AF

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

BUT12F BUT12AF

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

BUT12F

400

VCEO(SUS)

Collector-emitter

sustaining voltage

IC=0.1A; IB=0;L=25mH

V

BUT12AF

450

VCEsat

Collector-emitter

saturation voltage

BUT12F

BUT12AF

IC=6A; IB=1.2A

IC=5A; IB=1A

1.5

V

VBEsat

Base-emitter

saturation voltage

BUT12F

BUT12AF

IC=6A; IB=1.2A

IC=5A; IB=1A

1.5

V

ICES

Collector

cut-off current

BUT12F

BUT12AF

VCE=850V ;VBE=0

Tj=125℃

VCE=1000V ;VBE=0

Tj=125℃

体 IEBO

Emitter cut-off current

VEB=9V; IC=0

固I电NC半H导ANGE SEMICONDUCTOR hFE-1

DC current gain

hFE-2

DC current gain

Switching times resistive load

IC=10mA ; VCE=5V

IC=1A ; VCE=5V

ton

Turn-on time

1.0

3.0

mA

1.0

3.0

10

mA

10

35

10

35

1.0

μs

For BUT12F

ts

Storage time

IC=6A;IB1=-IB2=1.2A;VCC=250V

4.0

μs

For BUT12AF

tf

Fall time

IC=5A;IB1=-IB2=1A;VCC=250V

0.8

μs

2

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