BAS40W Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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BAS40W

SOT-323 Plastic -Encapsulate SCHOTTKY DIODE

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate DIODE

BAS40W SERIES SCHOTTKY DIODE

FEATURES

Power dissipation

PD : 200 mW（Tamb=25℃）

Collector current

IF: 200 mA

Collector-base voltage

VR: 40V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃　

ＳＯＴ－３２３

1.BASE

2.EMITTER　

3.COLLECTOR 　

　

１．２５±０．０５

２．３０±０．０５

Unit : mm

BAS40W Marking:43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking:45.K45 BAS40W-06 Marking:46.K46

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Diode capacitance

Reveres recovery time

Symbol

Test conditions

MIN

V(BR) R

IR= 10µA

40

IR

VR=30V

VF

IF=1mA

IF=40mA

CD

VR=0V f=1MHz

IF=10mA through IR=10mA

trr

to IR=1mA

MAX

200

380

1000

5

5

UNIT

V

nA

mV

pF

nS

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