IRFBA35N60C Ver la hoja de datos (PDF) - International Rectifier
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IRFBA35N60C Datasheet PDF : 3 Pages
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IRFBA35N60C
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
600 ––– ––– V VGS = 0V, ID = 250µA
––– 0.54 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.080 Ω VGS = 10V, ID = 21A
4.0 ––– 6.0 V VDS = VGS, ID = 250µA
––– ––– 100
––– ––– 500
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
16 ––– ––– S VDS = 50V, ID = 21A
––– ––– 280
ID = 21A
––– ––– 59 nC VDS = 360V
––– ––– 140
VGS = 10V
––– 28 –––
VDD = 300V
––– 89 ––– ns ID = 21A
––– 62 –––
RG = 1.3Ω
––– 33 –––
RD = 14Ω
––– 6170 –––
––– 3030 –––
VGS = 0V
VDS = 25V
––– 160 ––– pF ƒ = 1.0MHz
––– 14310 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
––– 132 –––
––– 216 –––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V
Avalanche Characteristics
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
–––
TBD
mJ
–––
21
A
–––
25
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.50
0.5
–––
°C/W
–––
58
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 35
A showing the
integral reverse
G
––– ––– 140
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
––– ––– 1.5 V TJ = 25°C, IS = 21A, VGS = 0V
––– 550 820 ns TJ = 25°C, IF = 21A
––– 12 18 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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