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2SA673

TO-92 Plastic-Encapsulated PNP Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92 Plastic-Encapsulated Transistors

2SA673 TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM : 0.4 W (Tamb=25℃)

Collector current

ICM: -0.5 A

Collector-base voltage

V(BR)CBO : -35 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO

Ic= -10µA , IE=0

-35

Collector-emitter breakdown voltage V(BR)CEO

IC=-1 mA , IB=0

-35

Emitter-base breakdown voltage

V(BR)EBO

IE=-10µA, IC=0

-4

Collector cut-off current

ICBO

VCB= -20 V , IE=0

DC current gain

hFE(1)*

hFE(2)

VCE=-3V, IC= -10mA

60

VCE=-3 V, IC=-500mA

10

Collector-emitter saturation voltage

VCEsat * IC= -150mA, IB=-15mA

Base-emitter voltage

*Measured using pulse

VBE

VCE=-3 V, IC=-10mA

MAX

-0.5

320

-0.6

-0.75

UNIT

V

V

V

µA

V

V

CLASSIFICATION OF hFE(1)

Rank

B

Range

60-120

C

100-200

D

160-320

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