IRG4BC30FDPBF Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRG4BC30FDPBF Datasheet PDF : 10 Pages
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2000
1600
1200
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
Cies
800
Coes
400
Cres
0
A
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC30FDPbF
20
VCE = 400V
IC = 17A
16
12
8
4
0
A
0
10
20
30
40
50
60
Qg, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.20
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 17A
2.10
2.00
1.90
1.80
0
A
20
40
60
80
R G, Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
10
IC = 34A
I C = 17A
1
IC = 8.5A
RG = 23 Ω
VGE = 15V
0.1 VCC = 480V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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