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9972GI

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

Advanced Power

Electronics Corp.

AP9972GI

RoHS-compliant Product

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

D

▼ Single Drive Requirement

▼ Lower On-resistance

G

S

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for all

commercial-industrial through hole applications.

BVDSS

RDS(ON)

ID

60V

18mΩ

35A

G DS

TO-220CFM(I)

Absolute Maximum Ratings

Symbol

Parameter

VDS

VGS

ID@TC=25℃

ID@TC=100℃

IDM

PD@TC=25℃

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current1

Total Power Dissipation

Linear Derating Factor

TSTG

Storage Temperature Range

TJ

Operating Junction Temperature Range

Rating

60

+25

35

22

120

31.3

0.25

-55 to 150

-55 to 150

Thermal Data

Symbol

Parameter

Rthj-c

Maximum Thermal Resistance, Junction-case

Rthj-a

Maximum Thermal Resistance, Junction-ambient

Value

4

65

Units

V

V

A

A

A

W

W/℃

℃

℃

Units

℃/W

℃/W

Data and specifications subject to change without notice

1

200812312

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