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SS8550LT1

SOT-23 Plastic-Encapsulate PNP Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate Transistors

SS8550LT1 TRANSISTOR（ PNP ）

FEATURES

Power dissipation

PCM : 0.3 W（Tamb=25℃）

Collector current

ICM : -1.5

A

Collector-base voltage

V(BR)CBO : -40

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃　

SOT— 23

1. BASE

2. EMITTER

3. COLLECTOR

２．４

１．３

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V(BR)CBO

Ic= -100 μA， IE=0

-40

V(BR)CEO

Ic= -0.1mA， IB=0

-25

V(BR)EBO

IE= -100 μA， IC=0

-5

Collector cut-off current

ICBO

VCB= -40 V , IE=0

Collector cut-off current

ICEO

VCE= -20 V , IB=0

Emitter cut-off current

IEBO

VEB= -5V , IC=0

DC current gain

hFE（1）

VCE= -1V, IC= -100m A

120

hFE（2）

VCE= -1V, IC= -800m A

40

Collector-emitter saturation voltage

VCE(sat) IC=-800 mA, IB= -80m A

Base-emitter saturation voltage

Transition frequency

CLASSIFICATION OF hFE(1)

Ｒａｎｋ　

Ｒａｎｇｅ　

DEVICE MARKING

SS8550LT1=Y2

VBE(sat) IC=-800 m A, IB= -80m A

VCE= -10V, IC= -50mA

fT

f=30MHz

100

Ｌ　

１２０－２００　

Ｈ　

２００－３５０　

Unit : mm

MAX UNIT

V

V

V

-0.1 μA

-0.1 μA

-0.1 μA

350

-0.5 V

-1.2 V

MHz

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