SSM4501GSD Ver la hoja de datos (PDF) - Silicon Standard Corp.

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SSM4501GSD

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Silicon Standard Corp. 

SSM4501GSD

P-CH ELECTRICAL CHARACTERISTICS

@TJ=25 oC (unless otherwise specified )

Symbol

BVDSS

ΔBVDSS/ΔTj

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Parameter

Test Conditions

Drain-Source Breakdown Voltage VGS=0V, ID=-250uA

Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA

Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A

VGS=-4.5V, ID=-3A

Gate Threshold Voltage

VDS=VGS, ID=-250uA

Forward Transconductance

Drain-Source Leakage Current ( Tj =25oC)

Drain-Source Leakage Current ( Tj =70oC)

VDS=-10V, ID=-5.3A

VDS=-30V, VGS=0V

VDS=-24V, VGS=0V

Gate-Source Leakage

Total Gate Charge2

VGS= ± 20V

ID=-5A

Gate-Source Charge

VDS=-24V

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

VGS=-4.5V

VDS=-15V

Rise Time

Turn-off Delay Time

Fall Time

ID=-1A

RG=6Ω,VGS=-10V

RD=15Ω

Input Capacitance

VGS=0V

Output Capacitance

VDS=-25V

Reverse Transfer Capacitance

f=1.0MHz

Min. Typ. Max. Units

-30 - - V

- -0.03 - V/℃

- - 49 mΩ

- - 75 mΩ

-1 - -3 V

- 8 -S

- - -1 uA

- - -25 uA

- - ±100 nA

- 9 15 nC

- 2 - nC

- 5 - nC

- 10 - ns

- 7 - ns

- 27 - ns

- 16 - ns

- 460 730 pF

- 180 - pF

- 130 - pF

SOURCE-DRAIN DIODE

Symbol

VSD

trr

Qrr

Parameter

Forward On Voltage2

Reverse Recovery Time2

Reverse Recovery Charge

Test Conditions

IS=-1.7A, VGS=0V

IS=-5A, VGS=0V,

dI/dt=100A/µs

Min. Typ. Max. Units

- - -1.2 V

- 21 - ns

- 18 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse width <300us , duty cycle <2%.

3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.

01/28/2008 Rev.1.00

www.SiliconStandard.com

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