A1209 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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A1209

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE

DC current gain

IC=-10mA ; VCE=-5V

fT

Transition frequency

IC=-10mA ; VCE=-10V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

Switching times resistive load

ton

Turn-on time

ts

Storage time

IC=10mA IB1=-IB2=1mA

tf

Fall time

‹ hFE Classifications

R

S

T

100-200 140-280 200-400

Product Specification

2SA1209

MIN TYP. MAX UNIT

-0.4

V

-0.1 μA

-0.1 μA

100

400

150

MHz

4.0

pF

0.1

μs

1.5

μs

0.1

μs

2

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