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R5509-42

PHOTOMULTIPLIER TUBES

Hamamatsu Photonics 

APPLICATION EXAMPLES

Photoluminescence measurement

Sample 6

InGaAsP/InP

p - InP

0.02 µm 2 × 1016 cm-3

p - InGaAsP

2 µm

p + InP 2 µm

p + InP SUB

350 µm

TPMHC0187EB

An epitaxial wafer at the room temper-

ature can be evaluated.

Photoluminescence measurement in

77K sample is possible at low power

excitation lights from a few to tens of

micro-watts.

Data was measured with a near infrared

measurement system described later.

SAMPLE TEMPERATURE

300K

( ) room

temperature

SAMPLE TEMPERATURE

77K

EXCITATION LIGHT: SHG Nd: YAG (532 nm)

SLIT: 0.5 × 0.5 mm

SAMPLE TEMPERATURE: 300K

EXCITATION LIGHT

POWER: 0.6 mW

1100

1200

EXCITATION LIGHT

POWER: 3 mW

1300

1400

1500

1600

1700

WAVELENGTH (nm)

TPMHB0617EA

EXCITATION LIGHT: SHG Nd: YAG (532 nm)

SLIT: 0.2 × 0.2 mm

SAMPLE TEMPERATURE: 77K

EXCITATION LIGHT POWER: 8 µW

EXCITATION LIGHT POWER: 50 µW

EXCITATION LIGHT POWER: 0.6 mW

1100

1200

1300

EXCITATION LIGHT POWER: 3 mW

1400

1500

1600

1700

WAVELENGTH (nm)

TPMHB0618EA

GComparison with Ge PIN photodiode

Sample 7

B-Doped Si (111)

low resistivity wafer 0.005-0.2 Ωcm

The R5509-42 PMT provides high detection effi-

ciency that allows detecting a distinct photolumi-

nescent peak with a high S/N ratio from a room

temperature sample.

The data were taken with a relatively weak excita-

tion in order to compare with a germanium detec-

tor (Ge PIN PD) which did not show a clear peak.

SAMPLE TEMPERATURE

300K

( ) room

temperature

EXCITATION LIGHT: Ar LASER (514.5 nm)

SAMPLE TEMPERATURE: 300 K

R5509-42

Ge PIN-PD

(77 K)

1000

1200

WAVELENGTH (nm)

1400

TPMHB0451EC

Sample 8

InGaAsP/InP

SAMPLE TEMPERATURE

77K

EXCITATION LIGHT: Ar LASER (514.5 nm)

200 µW

SAMPLE TEMPERATURE: 77 K

InGaAs/InP photoluminescence measurements were

performed under weak excitation conditions in order

to compare the detection limit between the R5509-72

and a Ge PIN photodiode. The result proves that the

R5509-72 allows to detect a peak output in the vicinity

of 1.3 µm which is undetectable with the Ge PIN pho-

todiode.

In addition to the improvement in the detection limit at

low light levels in the NIR region, the R5509-72 pro-

vides excellent time response, therefore, time-resolved

photometry in the NIR region is now possible.

R5509-72

1200

Ge PIN PD

(77 K)

1250

1300

1350

WAVELENGTH (nm)

1400

TPMHB0453EC

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