IRG4PH50K Ver la hoja de datos (PDF) - International Rectifier
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IRG4PH50K Datasheet PDF : 6 Pages
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IRG4PH50K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min. Typ. Max. Units
Conditions
1200 — — V VGE = 0V, IC = 250µA
18 — — V VGE = 0V, IC = 1.0A
— 0.91 — V/°C VGE = 0V, IC = 2.0mA
— 2.77 3.5
IC = 24A
VGE = 15V
— 3.28 —
— 2.54 —
3.0 — 6.0
V
IC = 45A
see figures 2, 5
IC = 24A , TJ = 150°C
VCE = VGE, IC = 250µA
— -10 — mV/°C VCE = VGE, IC = 2.0mA
13 19 — S VCE = 100 V, IC = 24A
— — 250 µA VGE = 0V, VCE = 1200V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 5000
VGE = 0V, VCE = 1200V, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
— 180 270
IC = 24A
Qge
Gate - Emitter Charge (turn-on)
— 25 38 nC VCC = 400V
see figure 8
Qgc
Gate - Collector Charge (turn-on)
— 70 110
VGE = 15V
td(on)
Turn-On Delay Time
— 36 —
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
— 27 — ns TJ = 25°C
— 200 300
IC = 24A, VCC = 960V
— 130 190
VGE = 15V, RG = 5.0Ω
Eon
Turn-On Switching Loss
— 1.21 —
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
— 2.25 — mJ see figures 9,10,14
Ets
Total Switching Loss
— 3.46 4.1
tsc
Short Circuit Withstand Time
10 — —
µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 5.0Ω
td(on)
Turn-On Delay Time
— 35 —
TJ = 150°C,
tr
td(off)
Rise Time
Turn-Off Delay Time
— 29 —
— 380 —
ns
IC = 24A, VCC = 960V
VGE = 15V, RG = 5.0Ω
tf
Fall Time
— 280 —
Energy losses include "tail"
Ets
Total Switching Loss
— 7.80 — mJ see figures 10,11,14
LE
Internal Emitter Inductance
— 13 — nH Measured 5mm from package
Cies
Input Capacitance
— 2800 —
VGE = 0V
Coes
Output Capacitance
— 140 — pF VCC = 30V
see figure 7
Cres
Reverse Transfer Capacitance
— 53 —
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited bymax. Repetitive rating; pulse width limited by maximum
junction temperature. (see figure 13b)
junction temperature.
VCC = 80% (VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(see figure 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
C-2
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