SI4435DY-T1-REVA Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4435DY-T1-REVA Datasheet PDF : 5 Pages
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Si4435DY
Vishay Siliconix
TYPICAL CHARACTERISTICS, PRODUCT REVISION A (25_C UNLESS NOTED)
Output Characteristics
50
40
VGS = 10 thru 5 V
30
4V
Transfer Characteristics
50
TC = -55°C
40
25° C
125°C
30
20
20
10
0
0
0.150
3V
2
4
6
8
10
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.125
0.100
0.075
0.050
VGS = 4.5 V
0.025
VGS = 10 V
0.000
0
10
20
30
40
50
ID – Drain Current (A)
Gate Charge
10
VDS = 15 V
8
ID = 4.6 A
6
4
2
0
0
10
20
30
40
50
Qg – Total Gate Charge (nC)
Document Number: 70149
S-51472—Rev. G, 01-Aug-05
10
0
0
1
2
3
4
5
6
4500
VGS – Gate-to-Source Voltage (V)
Capacitance
3600
Ciss
2700
1800
900
Coss
Crss
0
0
6
12
18
24
30
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
VGS = 10 V
ID = 8.0 A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–50 –25 0
25 50 75 100 125 150
TJ – Junction Temperature (_C)
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