IRGBC40K-S Ver la hoja de datos (PDF) - International Rectifier
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IRGBC40K-S Datasheet PDF : 7 Pages
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PD - 9.1134
IRGBC40K-S
INSULATED GATE BIPOLAR TRANSISTOR
Short Circuit Rated
UltraFast Fast IGBT
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over
5kHz) See Fig. 1 for Current vs. Frequency
curve
C
G
E
n-channel
VCES = 600V
VCE(sat) ≤ 3.2V
@VGE = 15V, IC = 25A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor
control and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
42
25
84
84
10
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
RθJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient, (PCB mount)**
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
------
Typ.
------
------
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2 (0.07)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
0.77
40
80
------
Units
°C/W
g (oz)
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