G4PF50W Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
G4PF50W Datasheet PDF : 8 Pages
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IRG4PF50W
6000
5000
4000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
3000
2000
1000
Coes
Cres
0
1
10
100
VCE , Collector-to-Emitter Voltage (V)
20 VCC = 400V
I C = 28A
16
12
8
4
0
0
40
80
120
160
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
4.0
VCC = 720V
VGE = 15V
TJ = 25 °C
IC = 28A
3.0
2.0
100 RG = O5.h0mΩ
VGE = 15V
VCC = 720V
10
1
IC = 56 A
IC = 28 A
IC = 14 A
1.0
0
10
20
30
40
50
60
RG , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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