G4PF50WD Ver la hoja de datos (PDF) - International Rectifier

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G4PF50WD

IGBT (INSULATED GATE BIPOLAR TRANSISTOR) ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4PF50WD

6000

5000

4000

VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

Cies

3000

2000

1000

Coes

Cres

0

1

10

100

VCE , Collector-to-Emitter Voltage (V)

20

VCC = 400V

I C = 28A

16

12

8

4

0

0

40

80

120

160

QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

6.0

VCC = 720V

VGE = 15V

TJ = 25 ° C

5.5 IC = 28A

5.0

4.5

4.0

3.5

0

10

20

30

40

50

RG , Gate Resistance( Ω )

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100 RG = 5.0Ω

VGE = 15V

VCC = 720V

IC = 56 A

10

IC = 28 A

IC = 14 A

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature °( C )

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

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Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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