NEZ1011-4E Ver la hoja de datos (PDF) - NEC => Renesas Technology
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NEZ1011-4E Datasheet PDF : 12 Pages
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NEZ1011-4E, NEZ1414-4E
RECOMMENDED OPERATING LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Gate ResistanceNote
Symbol
VDS
Gcomp
Tch
Rg
Test Condition
MIN.
9.0
50
Note Rg is the series resistance between the gate supply and the FET gate.
[NEZ1011-4E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS
VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp
VDS = 2.5 V, IDS = 20 mA
Gate to Drain Breakdown Voltage BVGD IGD = 20 mA
Thermal Resistance
Rth
Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
GL
Po (1 dB)
IDS (1 dB)
η add (1 dB)
f = 10.7, 11.2, 11.7 GHz
VDS = 9.0 V
IDS = 1.0 A (RF OFF)
Rg = 100 Ω
MIN.
1.0
–3.0
15
7.5
35.5
[NEZ1414-4E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS
VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp
VDS = 2.5 V, IDS = 20 mA
Gate to Drain Breakdown Voltage BVGD IGD = 20 mA
Thermal Resistance
Rth
Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
GL
Po (1 dB)
IDS (1 dB)
η add (1 dB)
f = 14.0 to 14.5 GHz
VDS = 9.0 V
IDS = 1.0 A (RF OFF)
Rg = 100 Ω
MIN.
1.0
–3.0
15
6.5
35.5
TYP.
9.0
100
TYP.
3.0
–1.3
18
4.5
8.0
36.5
1.5
30
TYP.
3.2
–1.3
18
4.5
7.0
36.5
1.5
30
MAX.
Unit
9.0
V
3
dB
+130
°C
100
Ω
MAX.
5.0
–0.5
5.0
2.0
Unit
A
V
V
°C/W
dB
dBm
A
%
MAX.
5.0
–0.5
5.0
2.0
Unit
A
V
V
°C/W
dB
dBm
A
%
2
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