IRF420 Ver la hoja de datos (PDF) - New Jersey Semiconductor

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Lista de partido

IRF420

2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs

New Jersey Semiconductor 

IRF420, IRF421, IRF422, IRF423

Electrical Specifications Tc = 25°C, Unless Otherwise Specified (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

ClSS

CQSS

CRSS

LD

VDS = 25V, VGS = OV, f = 1MHz, (Figure 1 1 )

Measured between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins

and the Center of Die.

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances.

Internal Source Inductance

LS

Measured from the

Source Lead, 6mm

(0.25in) from the Flange

and Source Bonding

Pad.

MIN TYP MAX UNITS

-

300

-

PF

-

75

-

PF

-

20

-

PF

5.0

nH

12.5

nH

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

Rejc

RejA

Free Air Operation

Source to Drain Diode Specifications

-

^-

-

2.5 °C/W

-

30 °C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNITS

Continuous Source to Drain Current

Pulse Source to Drain Current

(Note 3)

!SD

'SDM

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Diode

D

.JJE

-

-

2.5

A

10

A

Source to Drain Diode Voltage (Note 2)

1s

VSD

^ Tj = 25°C, ISD = 2.5A, VGS = OV, (Figure 13)

-

-

1.4

V

Reverse Recovery Time

trr

Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/us

130 270 540

ns

Reverse Recovered Charge

QRR

Tj = 25°C, ISD = 2.5A, dlso/dt = 100A/US

0.57 1.2 2.3

uC

NOTES:

2. Pulse test: pulse width < 300ns, duty cycle < 2%.

3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting Tj = 25°C, L = 60mH, RG = 25n, peak IAS = 2.5A, Figures 15,16.

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