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CPU165MK Datasheet PDF : 2 Pages
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CPU165MK
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
— 0.60 — V/°C VGE = 0V, IC = 1.0mA
— 2.1 2.7
IC = 30A
VGE = 15V
— 2.6 — V IC = 52A
— 2.3 —
IC = 30A, T J = 150°C
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
3.0 — 5.5
VCE = VGE, IC = 250µA
— -14 — mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
9.8 17 — S VCE = 100V, I C = 30A
ICES
Zero Gate Voltage Collector Current
— — 250 µA VGE = 0V, VCE = 600V
— — 6500
VGE = 0V, VCE = 600V, T J = 150°C
VFM
Diode Forward Voltage Drop
— 1.3 1.7 V IC = 25A
IGES
Gate-to-Emitter Leakage Current
— 1.2 1.5
IC = 25A, T J = 150°C
— — ±500 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Notes: Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
Min. Typ. Max. Units
Conditions
— 120 200
— 27 42
— 44 73
IC = 30A
nC VCC = 400V
— 74 —
— 100 —
— 260 460
— 190 290
TJ = 25°C
ns IC = 30A, VCC = 480V
VGE = 15V, R G = 5.0Ω
Energy losses include "tail" and
— 1.9 —
diode reverse recovery.
— 2.6 — mJ
— 4.5 7.0
10 — —
— 77 —
— 100 —
— 530 —
— 360 —
µs VCC = 360V, T J = 125°C
VGE = 15V, R G = 5.0Ω, VCPK < 500V
TJ = 150°C,
ns IC = 30A, VCC = 480V
VGE = 15V, R G = 5.0Ω
Energy losses include "tail" and
— 7.3 — mJ diode reverse recovery.
— 2900 —
— 220 —
— 30 —
VGE = 0V
pF VCC = 30V
ƒ = 1.0MHz
— 50 75 ns TJ = 25°C
— 105 160
TJ = 125°C
— 4.5 10 A TJ = 25°C
— 8.0 15
TJ = 125°C
— 112 375 nC TJ = 25°C
— 420 1200
TJ = 125°C
— 250 — A/µs TJ = 25°C
— 160 —
TJ = 125°C
IF = 25A
VR = 200V
di/dt = 200A/µs
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0Ω.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
Refer to Section D - page D-13 for Package Outline 4 - IMS-1 Package (10 pins)
C-962
To Order
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