IRFAC30 Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRFAC30

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRFAC30

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage

VGS= 0; ID= 1mA

VGS(th) Gate Threshold Voltage

RDS(on) Drain-Source On-Resistance

IGSS

Gate-Body Leakage Current

VDS= VGS; ID= 0.25mA

VGS= 10V; ID=1.9A

VGS= ±20V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= 480V; VGS= 0

VSD

Forward On-Voltage

IS= 3.6A; VGS= 0

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

VDS=25V,VGS=0V,

F=1.0MHz

MIN MAX UNIT

600

V

2

4

V

2.2

Ω

±100

nA

25

μA

1.6

V

630

pF

80

pF

15

pF

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