BSM191 Ver la hoja de datos (PDF) - Infineon Technologies
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BSM191 Datasheet PDF : 7 Pages
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BSM 191
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
Gate threshold voltage
VGS = VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 1000 V, VGS = 0
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-state resistance
VGS = 10 V, ID = 18 A
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 × ID × R , DS(on)max. ID = 18 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton (ton = td (on) + tr)
VCC = 500 V, VGS = 10 V
ID = 18 A, RGS = 3.3 Ω
Turn-off time toff (toff = td (off) + tf)
VCC = 500 V, VGS = 10 V
ID = 18 A, RGS = 3.3 Ω
Symbol
min.
Values
Unit
typ.
max.
V(BR)DSS
VGS(th)
I DSS
IGSS
RDS(on)
1000
2.1
–
–
–
–
–
3.0
50
300
10
0.33
V
–
4.0
µA
250
1000
nA
100
Ω
0.37
gfs
15
22
–
S
Ciss
–
22
30
nF
Coss
–
1
1.5
Crss
–
0.48
0.8
td (on)
–
60
–
ns
tr
–
30
–
td (off)
–
tf
–
350
–
60
–
Semiconductor Group
72
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