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IRFM140 Datasheet PDF : 3 Pages
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N-CHANNEL
POWER MOSET
IRFM140 / 2N7218
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BVDSS
∆BVDSS
∆TJ
RDS(on)(4)
Drain-Source Breakdown
Voltage
Temperature Coefficent of
Breakdown Voltage
Static Drain-Source
On-State Resistance
VGS = 0
Reference
to 25°C
VGS = 10V
VGS = 10V
ID = 1.0mA
ID = 1.0mA
ID = 20A
ID = 28A
VGS(th)
gfs(4)
Gate Threshold Voltage
Forward Transconductance
VDS = VGS
VDS ≥ 15V
ID = 250µA
I DS = 21A
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
IGSS
Forward Gate-Source
Leakage
VGS = 20V
IGSS
Reverse Gate-Source
Leakage
VGS = -20V
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Crss
Qg
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VGS = 0
VDS = 25V
f = 1.0MHz
VGS = 10V
ID = 28A
VDS = 0.5BVDSS
VDD = 50V
ID = 20A
RG = 9.1Ω
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
ISM(1)
Continuous Source Current
Pulse Source Current
VSD(4)
trr(4)
Qrr(4)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = 28A
VGS = 0
IS = 28A
VDD ≤ 50V
TJ = 25°C
TJ = 25°C
di/dt = 100A/µs
Min. Typ Max. Units
100
V
0.13
V/°C
0.077
Ω
0.125
2
4
V
9.1
S(Ʊ)
25
µA
250
100
nA
-100
1660
550
pF
120
30
59
2.4
12
nC
12
30.7
21
145
ns
64
105
28
A
112
1.5
V
400
ns
2.9
µC
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8085
Website: http://www.semelab-tt.com
Issue 1
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