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NTF3N08 Datasheet PDF : 2 Pages
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NTF3N08, NTF3N08L
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80 V Power MOSFET
ON Semiconductor utilizes its latest MOSFET technology process
to manufacture 80 V power MOSFET devices to achieve the lowest
possible on–resistance per silicon area. These 80 V devices are
designed for Power Management solutions in 42 V Automotive
system applications. Typical applications include integrated starter
alternator, electronic power steering, electronic fuel injection,
catalytic converter heaters and other high power applications made
possible via an automotive 42 V bus. ON Semiconductor’s latest
technology offering continues to offer high avalanche energy
capability and low reverse recovery losses.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown
Voltage
V(BR)DSS
(VGS = 0 Vdc, ID = 250 µAdc)
80
Zero Gate Voltage Drain Current IDSS
(VDS = 80 Vdc, VGS = 0 Vdc)
–
(VDS = 80 Vdc, VGS = 0 Vdc,
–
TJ =150°C)
Gate–Body Leakage Current
IGSS
(VGS = ±20 Vdc, VDS = 0 Vdc)
–
Vdc
–
–
µAdc
– 1.0
– 10
nAdc
– ±100
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
NTF3N08
NTF3N08L
VGS(th)
Vdc
2.0 3.0 4.0
1.0 1.5 2.0
Static Drain–to–Source
On–Resistance
(ID = 1.5 Adc)
NTF3N08, VGS= 10 V
NTF3N08L, VGS = 5 V
RDS(on)
mΩ
– 140 –
– 155 –
http://onsemi.com
3 AMPERES
3N08 Typ RDS(on) = 140 mΩ
3N08L Typ RDS(on) = 155 mΩ
SOT–223
CASE 318E
STYLE 3
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2000
1
October, 2000 – Rev. 0
Publication Order Number:
NTF3N08/D
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