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KGF25N135NDH

High speed switching

KEC 

SEMICONDUCTOR

TECHNICAL DATA

General Description

KEC Field Stop Trench IGBTs offer low switching losses, high energy

efficiency and high avalanche ruggedness for soft switching application

such as IH(induction heating), microwave oven, etc.

FEATURES

·High speed switching

·High ruggedness, temperature stable behavior

·Soft current turn-off waveforms

·Extremely enhanced avalanche capability

KGF25N135NDH

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL RATING UNIT

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current

VCES

1350

V

VGES

±20

V

@Tc=25℃

IC

@Tc=100℃

50

A

25

A

Pulsed Collector Current

ICM*

75

A

Diode Continuous Forward Current @Tc=100℃

IF

25

A

Diode Maximum Forward Current

IFM

75

A

Maximum Power Dissipation

@Tc=25℃

PD

@Tc=100℃

250

W

100

W

Maximum Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg -55 to + 150 ℃

*Repetitive rating : Pulse width limited by max. junction temperature

THERMAL CHARACTERISTIC

CHARACTERISTIC

Thermal Resistance, Junction to Case (IGBT)

Thermal Resistance, Junction to Case (DIODE)

Thermal Resistance, Junction to Ambient

SYMBOL

Rt h JC

Rt h JC

Rt h JA

MAX.

0.5

2.0

40

UNIT

℃/W

℃/W

℃/W

2014. 8. 26

Revision No : 1

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