02N60S5(2004) Ver la hoja de datos (PDF) - Infineon Technologies

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02N60S5
(Rev.:2004)

Cool MOS™ Power Transistor

Infineon Technologies 

SPU02N60S5

SPD02N60S5

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Characteristics

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

-

1.4

-S

ID=1.1A

Input capacitance

Ciss

VGS=0V, VDS=25V,

- 240 - pF

Output capacitance

Coss

f=1MHz

-

77

-

Reverse transfer capacitance Crss

-

4.4

-

Turn-on delay time

td(on) VDD=350V, VGS=0/10V,

-

35

- ns

Rise time

Turn-off delay time

Fall time

tr

t d(off)

tf

ID=1.8A, RG=50Ω

-

35

-

-

35 42

-

20 30

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Qgs

Qgd

VDD=350V, ID=1.8A

Gate charge total

Qg

VDD=350V, ID=1.8A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=350V, ID=1.8A

-

2.3

- nC

-

4.5

-

-

7.3 9.5

-

8

-V

1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev. 2.1

Page 3

2004-03-30

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