02N60S5 Ver la hoja de datos (PDF) - Infineon Technologies AG
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02N60S5 Datasheet PDF : 11 Pages
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Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPU02N60S5
SPD02N60S5
VDS
RDS(on)
ID
PG-TO252
600 V
3
Ω
1.8 A
PG-TO251
2
3
1
3
2
1
Type
SPU02N60S5
SPD02N60S5
Package
PG-TO251
PG-TO252
Ordering Code
Q67040-S4226
Q67040-S4213
Marking
02N60S5
02N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 1.35 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 1.8 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature
Tj , Tstg
Value
1.8
1.1
3.2
50
0.07
1.8
±20
±30
25
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.5
Page 1
2008-04-07
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