BAV199 Ver la hoja de datos (PDF) - Diode Semiconductor Korea

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BAV199

Dual surface mount low leakage diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Dual surface mount low leakage diode

BAV199

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX

Reverse breakdown voltage

V(BR) IR= 100μA

85

Reverse voltage leakage current

Forward voltage

Junction capacitance

IR

VR=75V

VR=75V Tj=150℃

IF=1mA

VF

IF=10mA

IF=50mA

IF=150mA

Cj

VR=0V f=1MHz

5.0

80

900

1000

1100

1250

2.0

Reverse recovery time

trr

IF=IR=10mA Irr=0.1*IR

RL=100Ω

3.0

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

UNIT

V

nA

nA

mV

pF

μS

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