Philips Semiconductors
Low-leakage double diode
Product specification
BAV199
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
PINNING
PIN
1
2
3
anode
cathode
anode; cathode
handbook, 4 columns
2
DESCRIPTION
1
APPLICATION
• Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
2
1
3
Top view
3
MAM107
Marking code: JYp = made in Hong Kong; JYt = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
−
−
single diode loaded; note 1; see Fig.2 −
double diode loaded; note 1; see Fig.2 −
−
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 µs
−
tp = 1 ms
−
tp = 1 s
−
Tamb = 25 °C; note 1
−
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
MAX. UNIT
85
V
75
V
160
mA
140
mA
500
mA
4
A
1
A
0.5
A
250
mW
+150 °C
150
°C
1999 May 11
2