BAV199 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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BAV199

Dual surface mount low leakage diode

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Dual surface mount low leakage diode

BAV199

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Reverse breakdown voltage

V(BR) IR= 100μA

85

V

Reverse voltage leakage current

Forward voltage

IR

VR=75V

VR=75V Tj=150℃

IF=1mA

VF

IF=10mA

IF=50mA

IF=150mA

5.0

nA

80

nA

900

1000 mV

1100

1250

Junction capacitance

Cj

VR=0V f=1MHz

2.0

pF

Reverse recovery time

trr

IF=IR=10mA Irr=0.1*IR

RL=100Ω

3.0

μS

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSDC039

Rev.A

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