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BC546B
(Rev.:2001)

Amplifier Transistors NPN Silicon

ON Semiconductor 

ON Semiconductort

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol BC546 BC547 BC548 Unit

Collector–Emitter Voltage

VCEO

65

45

30

Vdc

Collector–Base Voltage

VCBO

80

50

30

Vdc

Emitter–Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

IC

100

mAdc

Total Device Dissipation @ TA = 25°C

PD

Derate above 25°C

625

mW

5.0

mW/°C

Total Device Dissipation @ TC = 25°C

PD

Derate above 25°C

1.5

Watt

12

mW/°C

Operating and Storage Junction

TJ, Tstg

–55 to +150

°C

Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

RqJA

RqJC

200

83.3

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mA, IB = 0)

BC546

BC547

BC548

V(BR)CEO

65

45

30

Collector–Base Breakdown Voltage

(IC = 100 µAdc)

BC546

BC547

BC548

V(BR)CBO

80

50

30

Emitter–Base Breakdown Voltage

(IE = 10 mA, IC = 0)

BC546

BC547

BC548

V(BR)EBO

6.0

6.0

6.0

Collector Cutoff Current

(VCE = 70 V, VBE = 0)

(VCE = 50 V, VBE = 0)

(VCE = 35 V, VBE = 0)

(VCE = 30 V, TA = 125°C)

BC546

ICES

—

BC547

—

BC548

—

BC546/547/548

—

BC546

BC546B

BC547A

BC547B

BC547C

BC548B

BC548C

1

2

3

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

COLLECTOR

1

2

BASE

3

EMITTER

Typ

Max

Unit

—

—

V

—

—

—

—

—

—

V

—

—

—

—

—

—

V

—

—

—

—

0.2

15

nA

0.2

15

0.2

15

—

4.0

µA

© Semiconductor Components Industries, LLC, 2001

1

May, 2001 – Rev. 3

Publication Order Number:

BC546/D

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