6R520E6 Ver la hoja de datos (PDF) - Infineon Technologies
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6R520E6 Datasheet PDF : 16 Pages
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600V CoolMOS™ E6 Power Transistor
IPP60R520E6, IPA60R520E6
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating, halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
drain
pin 2
gate
pin 1
source
pin 3
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss @ 400V
Body diode di/dt
650
0.52
23.4
22
2.1
500
V
!
nC
A
µJ
A/µs
Type / Ordering Code
IPA60R520E6
IPP60R520E6
Package
PG-TO220 FullPAK
PG-TO220
Marking
6R520E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2010-04-09
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