MMBT2907A Ver la hoja de datos (PDF) - WEJ ELECTRONIC CO.

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MMBT2907A

TRANSISTOR (PNP)

WEJ ELECTRONIC CO. 

RoHS

MMBT2907A

MMBT2907A TRANSISTOR (PNP)

SOT-23

ＷＥＪ　ＥＬＥＣＴＲＯＮＩＣ　ＣＯ．，ＬＴＤ FEATURES

y Epitaxial planar die construction

y Complementary NPN Type available(MMBT2222A)

1. BASE

2. EMITTER

3. COLLECTOR

MARKING:2F

MAXIMUM RATINGS(TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction Temperature

Storage Temperature

Value

-60

-60

-5

-0.6

0.225

150

-55 to +150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICE0

IEBO

hFE(1)

hFE(2)

hFE(3)

hFE(4)

hFE(5)

VCE(sat)

VCE(sat)

VBE(sat)

VBE(sat)

Test conditions

IC=-10μA,IE=0

IC=-10mA,IB=0

IE=-10μA,IC=0

VCB=-50V,IE=0

VCE=-30V,VEB(0ff)=-0.5V

VEB=-3V,IC=0

VCE=-10V,IC=-0.1mA

VCE=-10V,IC=-1mA

VCE=-10V,IC=-10mA

VCE=-10V,IC=-150mA

VCE=-10V,IC=-500mA

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

IC=-150mA,IB=-15mA

IC=-500mA,IB=-50mA

MIN TYP MAX UNIT

-60

V

-60

V

-5

V

-20 n A

-50

nA

-10

nA

75

100

100

100

300

50

-0.4

V

-1.6

V

-1.3

V

-2.6

V

Transition frequency

fT

VCE=-20V,IC=-50mA,f=100MHz

200

MHz

Delay time

Rise time

td

VCC=-30V,IC=-150mA IB1=- 15mA

tr

10

nS

25

nS

Storage time

Fall time

tS

tf

VCC=-6V,IC=-150mA,IB1=-IB2=-15mA

225 nS

60

nS

WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com

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