M12L64164A-5BIG Ver la hoja de datos (PDF) - [Elite Semiconductor Memory Technology Inc.
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M12L64164A-5BIG Datasheet PDF : 45 Pages
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ESMT
MODE REGISTER FIELD TABLE TO PROGRAM MODES
M12L64164A
Operation Temperature Condition -40°C~85°C
Register Programmed with MRS
Address
Function
A13~A12
RFU
A11~A10/AP
RFU
A9
W.B.L
A8 A7 A6 A5 A4 A3 A2 A1 A0
TM
CAS Latency
BT
Burst Length
Test Mode
A8 A7
Type
A6
0
0 Mode Register Set 0
0
1
Reserved
0
1
0
Reserved
0
1
1
Reserved
0
Write Burst Length
1
A9
Length
1
0
Burst
1
1
Single Bit
1
CAS Latency
Burst Type
Burst Length
A5 A4 Latency A3 Type A2 A1 A0 BT = 0 BT = 1
0
0 Reserved 0 Sequential 0
0
0
1
1
0
1 Reserved 1 Interleave 0
0
1
2
2
1
0
2
0
1
0
4
4
1
1
3
0
1
1
8
8
0
0 Reserved
1
0
0 Reserved Reserved
0
1 Reserved
1
0
1 Reserved Reserved
1
0 Reserved
1
1
0 Reserved Reserved
1
1 Reserved
1
1
1 Full Page Reserved
Full Page Length : 256
POWER UP SEQUENCE
1.Apply power and start clock, Attempt to maintain CKE = ”H”, DQM = ”H” and the other pin are NOP condition at the inputs.
2. Maintain stable power , stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue mode register set command to initialize the mode register.
cf.) Sequence of 4 & 5 is regardless of the order.
The device is now ready for normal operation.
Note : 1. RFU(Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2007
Revision: 1.2
9/45
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