ESMT
M12L64164A
Operation temperature condition -25℃ ~ 85℃
BURST SEQUENCE (BURST LENGTH = 4)
Initial Adrress
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial
A2
A1
A0
Sequential
Interleave
0
0
0
0123456701234567
0
0
1
1234567010325476
0
1
0
2345670123016745
0
1
1
3456701232107654
1
0
0
4567012345670123
1
0
1
5670123454761032
1
1
0
6701234567452301
1
1
1
7012345676543210
Elite Semiconductor Memory Technology Inc.
Publication Date: Dec. 2004
Revision: 0.1
10/44