MPSA20 Ver la hoja de datos (PDF) - Motorola => Freescale

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MPSA20

Amplifier Transistor

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistor

NPN Silicon

Order this document

by MPSA20/D

MPSA20

COLLECTOR

3

2

BASE

1

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

Collector – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VCEO

VCBO

IC

PD

40

Vdc

4.0

Vdc

100

mAdc

625

mW

5.0

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

1.5

Watts

12

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance, Junction to Ambient

RqJA(1)

200

Thermal Resistance, Junction to Case

RqJC

83.3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Unit

°C/W

°C/W

Symbol

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

Emitter – Base Breakdown Voltage

(IE = 100 µAdc, IC = 0)

V(BR)EBO

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

1. RqJA is measured with the device soldered into a typical printed circuit board.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

1

2

3

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Min

Max

Unit

40

—

Vdc

4.0

—

Vdc

—

100

nAdc

©MMotootorroollaa,

Small–Signal

Inc. 1996

Transistors,

FETs

and

Diodes

Device

Data

1

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