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IRFP240 Datasheet PDF : 7 Pages
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IRFP240
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
I SD
Modified MOSFET
D
Pulse Source to Drain Current (Note 3)
I SDM
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
MIN TYP MAX UNITS
-
-
20
A
-
-
80
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
V SD
TJ = 25oC, ISD = 18A, VGS = 0V (Figure 13)
-
-
2.0
V
trr
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
120 250
530
ns
Q RR
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs
1.3
2.6
5.6
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 1.9mH, RGS = 50Ω, peak IAS = 20A.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
16
12
8
4
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-130-5
10-4
PDM
t1
t2 t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
0.1
1
10
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFP240 Rev. B
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