IRFR9120N Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.

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Lista de partido

IRFR9120N

Ultra Low On-Resistance

Kersemi Electronic Co., Ltd. 

800

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

600

Ciss

400

Coss

Crss

200

0

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

IRFR/U9120N

20

ID = -4.0 A

16

VDS =-80V

VDS =-50V

VDS =-20V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

5

10

15

20

25

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

TJ = 150° C

1

TJ = 25 ° C

0.1

0.2

VGS = 0 V

0.8

1.4

2.0

2.6

-VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

10

100us

1ms

1

10ms

TC = 25 ° C

TJ = 150° C

Single Pulse

0.1

1

10

100

-VDS , Drain-to-Source Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

2014-8-14

4

www.kersemi.com

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