IRF250 Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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IRF250 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
IRF250 Series RRooHHSS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
5000
4800
VGS = 0V, f = 1MHz
Ciss = Cgs +Cgd (Cds shorted )
Coss = Cds +Cgd
Crss = Cgd
3600
Ciss
2400
1200
0
100
Coss
Crss
101
Drain-Source voltage, VSD (V)
Fig.7 Typical gate charge vs. gate-to-source
voltage
20
VDS = 160V
16
VDS = 100V
VDS = 40V
12
8
4
ID = 30 A
0
0
30
60
90
120
150
Total gate charge, QG (nC)
Fig.6 Typical source-drain diode forward
voltage
100
150ºC
25ºC
10
0.5
VGS = 0V
1.0
1.5
2.0
2.5
Source-Drain voltage, VSD (V)
Fig.8 Maximum safe operating area
103
Operation in This Area is Limited by RDS(ON)
102
10µs
10
1
1
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10
100µs
1ms
10ms
102
103
Drain-source voltage, VDS(V)
Fig.9 Maximum drain current vs.
Case temperature
30
25
20
15
10
5
0
25
50
75
100
125
150
Case temperature, TC (°C)
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