DAN222M Ver la hoja de datos (PDF) - ROHM Semiconductor
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DAN222M Datasheet PDF : 3 Pages
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Data Sheet
Switching Diode
DAN222M
Applications
Ultra high speed switching
Features
1) Ultra small mold type. (VMD3)
2) High reliability.
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
1.2±0.1
0.32±0.05
(3)
0.13±0.05
(1)
(2)
±
±
0.4
0.4
～
0.5±0.05
ROHM : VMD3
dot (year week factory)
Taping specifications (Unit : mm)
±
±
φ±
Land size figure (Unit : mm)
VMD3
Structure
±
±
φ±
±
±
±
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak) VRM
80
V
Reverse voltage (DC)
VR
80
V
Forward voltage (Single)
IFM
300
mA
Average rectified forward current (Single)
Io
100
mA
Surge current (t=1us)
Isurge
4
A
Power dissipation
Pd
150
mW
Junction temperature
Storage temperature
Tj
150
°C
Tstg
55 to 150
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
VF
-
-
1.2
Reverse current
IR
-
-
0.1
Capacitance between terminals
Ct
-
-
3.5
Reverse recovery time
trr
-
-
4
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Unit
Conditions
V
IF=100mA
μA
VR=70V
pF
VR=6V , f=1MHz
ns
VR=6V , IF=5mA , RL=50
2011.06 - Rev.B
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