DAN222 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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DAN222 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Diode
DAN222 SWITCHING DIODE
FEATURES:
z Four types of packaging are available
z High speed
z Suitable for high packing density layout
z High reliability
MARKING: N
SOT-523
1
3
2
N
N
Solid dot = Green molding compound device,if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Average Rectified Output Current
Power Dissipation
Thermal resistance From Junction to ambient
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IFSM
IO
PD
RθJA
TJ
TSTG
Limit
80
80
300
2.0
100
150
833
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100μA
VR=70V
Min
Max
80
0.1
Forward voltage
VF
IF=100mA
1.2
Diode capacitance
Reverse recovery time
CD
VR=0, f=1MHz
3.5
trr
VR=6V, IF=IR=5mA
4
Unit
V
V
mA
A
mA
mW
℃/W
℃
℃
Unit
V
μA
V
pF
ns
www.cj-elec.com
1
B,Oct,2014
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