Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diode
DAN222 SWITCHING DIODE
FEATURES:
Power dissipation
PD:
150 mW (Tamb=25℃)
Collector current
IF:
100 mA
Collector-base voltage
VR:
80 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
CIRCUIT:
SOT-523
1
3
2
MARKING: N
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
Test conditions
MIN
MAX
V(BR)
IR= 100µA
80
IR
VR=70V
0.1
Forward voltage
VF
IF=100mA
1.2
Diode capacitance
Reverse recovery time
CD
VR=6V, f=1MHz
3.5
trr
VR=6V, IF=5mA
4
UNIT
V
µA
V
pF
ns