IXFP20N50P3M Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Lista de partido
IXFP20N50P3M Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
VDS = 20V, ID = 10A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RG = 5 (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 10A
RthJC
Characteristic Values
Min. Typ. Max.
11
18
S
1800
pF
230
pF
8.3
pF
2.3
10
ns
5
ns
43
ns
9
ns
36
nC
7
nC
13
nC
2.15 C/W
IXFP20N50P3M
ISOLATED TO-220 (IXFP...M)
12 3
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 10A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
20 A
80 A
1.4 V
250 ns
8.0
A
0.6
μC
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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