SKB15N60HS Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Lista de partido

SKB15N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SKB15N60HS

TJ=-55°C

25°C

150°C

20A

10A

0A

0,0V

0,5V

1,0V

1,5V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

2.0V

1.8V

1.6V

IF=30A

1.4V

IF=15A

1.2V

IF=7.5A

1.0V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as a

function of junction temperature

0K/W D=0.5

0.2

0.1

0.05

1K /W

0.02

0.01

single pulse

R,(1/W)

0.311

0.271

0.221

0.584

0.314

R1

τ, (s)

7.83*10-2

1.21*10-2

1.36*10-3

1.53*10-4

2.50*10-5

R2

C1=τ1/R1 C2=τ2/R2

2K /W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tP, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse

width

(D=tP/T)

Power Semiconductors

11

Rev 2.3 Oct. 07

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