BT151 Ver la hoja de datos (PDF) - DIYI Electronic Technology Co., Ltd.
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BT151 Datasheet PDF : 5 Pages
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6&5
ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated)
%7 Series R
PARAMETER
SYMBOL
RATINGS
UNIT
BT151(F)-500R
500 (Note 2)
Repetitive Peak Off-State Voltages
BT151(F)-650R VDRM, VRRM
650 (Note 2)
V
BT151(F)-800R
800
Average On-State Current (half sine wave; Tmb ≤109°C)
IT(AV)
7.5
A
RMS on-State Current (all conduction angles)
IT(RMS)
12
A
Non-Repetitive Peak On-State Current
t = 10 ms
(half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms
ITSM
I2t for Fusing (t = 10 ms)
I2t
100
110
A
50
A2s
Repetitive Rate of Rise of On-State Current After Triggering
(ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs)
dIT /dt
50
A/μs
Peak Gate Current
IGM
2
A
Peak Gate Voltage
VGM
5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Gate Power
PGM
5
W
Average Gate Power (Over any 20 ms period)
PG(AV)
0.5
W
Operating Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-40 ~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/μs.
THERMAL DATA
PARAMETER
Junction to Mounting Base
TO-220
SYMBOL
θJMb
RATINGS
1.3
UNIT
K/W
Junction to Ambient
TO-220
θJA
60
K/W
STATIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated)
PARAMETER
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
SYMBOL
CONDITIONS
IGT VD = 12 V, IT = 0.1 A
IL VD = 12 V, IGT = 0.1 A
IH VD = 12 V, IGT = 0.1 A
VT IT = 23 A
VGT
VD = 12 V, IT = 0.1 A
VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C
ID , IR VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C
DYNAMIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated)
MIN
0.35
PARAMETER
Critical Rate of Rise of
Off-State Voltage
Gate Controlled Turn-on
Time
Circuit Commutated
Turn-off tIme
SYMBOL
CONDITIONS
MIN
VDM = 67% VDRM(max), Gate open circuit 50
dVD /dt TJ = 125 °C,
exponential waveform; RGK = 100Ω
200
tGT
ITM = 40 A, VD = VDRM(max), IG = 0.1 A,
dIG /dt = 5 A/μs
VD = 67% VDRM(max), TJ = 125°C;
tQ ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs,
dVD /dt = 50 V/μs, RGK = 100 Ω
TYP
4.2
12.6
12
1.59
0.7
0.5
0.1
MAX
130
1000
2
70
MAX
5
40
20
1.75
UNIT
mA
mA
mA
V
1.5
V
0.5 mA
UNIT
V/μs
μs
μs
Mar.2015-REV.00
www.sddydz.com
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