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IRF640FP

18A 200V N CHANNEL POWER MOSFET

First Components International 

IRF640FP 18A 200V N CHANNEL POWER MOSFET

Description

Mechanical Dimensions

G

DS

ITO-220AB

DIMENSION IN MM

GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high

speed power switching applications such as switching

regulators, converters, solenoid and relay drivers.

‹ Silicon Gate for Fast Switching Speeds

‹ Low RDS(on) to Minimize On-Losses. Specified at Elevated

Temperature

‹ Rugged – SOA is Power Dissipation Limited

‹ Source-to-Drain Characterized for Use With Inductive

Loads

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current Ё Continuous

Ё Pulsed

Gate-to-Source Voltage Ё Continue

Ё Non-repetitive

Total Power Dissipation

Derate above 25к

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к

(VDD = 100V, VGS = 10V, IL = 18A, L = 1.38mH, RG = 25ȍ)

Thermal Resistance Ё Junction to Case

Ё Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

Symbol

ID

IDM

VGS

VGSM

PD

TJ, TSTG

EAS

șJC

șJA

TL

Value

18

72

±20

±40

125

1.00

-55 to 150

224

1.00

62.5

260

Unit

A

V

V

W

W/к

к

mJ

к/W

к

(1) Pulse Width and frequency is limited by TJ(max) and thermal response

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