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STB80PF55_06

P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB80PF55 - STP80PF55

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

55

V

VGS

Gate-source voltage

ID(1)

Drain current (continuous) at TC = 25°C

±16

V

80

A

ID

IDM (2)

Drain current (continuous) at TC = 100°C

Drain current (pulsed)

57

A

320

A

PTOT

Total dissipation at TC = 25°C

300

W

Derating factor

2

W/°C

dv/dt (3) Peak diode recovery voltage slope

7

V/ns

EAS(4)

Single pulse avalanche energy

1.4

J

Tj

Operating junction temperature

Tstg

Storage temperature

-55 to 175

°C

1. Current limited by package

2. Pulse width limited by safe operating area

3. ISD < 40A, di/dt < 300 A/µs, VDD=80% V(BR)DSS

4. Starting Tj=25°C, ID=80A, VDD=40V

Note:

For the P-CHANNEL MOSFET actual polarity of voltages and current has to be

reversed

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Maximum lead temperature for soldering purpose

Value

0.5

62.5

300

Unit

°C/W

°C/W

°C

3/13

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